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IS62C1024AL IS65C1024AL
128K x 8 LOW POWER CMOS STATIC RAM
FEATURES
* High-speed access time: 35, 45 ns * Low active power: 100 mW (typical) * Low standby power: 20 W (typical) CMOS standby * Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications * Fully static operation: no clock or refresh required * TTL compatible inputs and outputs * Single 5V (10%) power supply * Commercial, Industrial, and Automotive temperature ranges available * Standard Pin Configuration: -- 32-pin SOP/ 32-pin TSOP (Type 1) * Lead free available
ISSI
JANUARY 2005
(R)
DESCRIPTION
The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
Copyright (c) 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
1
IS62C1024AL IS65C1024AL
PIN CONFIGURATION
32-Pin SOP
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type 1)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
(R)
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
A11 A9 A8 A13 WE CE2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
PIN DESCRIPTIONS
A0-A16 CE1 CE2 OE WE I/O0-I/O7 VDD GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground
OPERATING RANGE (IS62C1024AL)
Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C VDD 5V 10% 5V 10%
OPERATING RANGE (IS65C1024AL)
Range Automotive Ambient Temperature -40C to +125C VDD 5V 10%
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
IS62C1024AL IS65C1024AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value -0.5 to +7.0 -65 to +125 1.0 20 Unit V C W mA
ISSI
(R)
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Test Conditions VDD = Min., IOH = -1.0 mA VDD = Min., IOL = 2.1 mA Options Min. 2.4 -- 2.2 -0.5 -1 -2 -5 -1 -2 -5 Max. -- 0.4 VDD + 0.5 0.8 1 2 5 1 2 5 Unit V V V V A
GND VIN VDD GND VOUT VDD CE1 = VIH, or CE2 = VIL, or OE = VIH or WE = VIL
ILO
Output Leakage
Com. Ind. Auto. Com. Ind. Auto.
A
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
3
IS62C1024AL IS65C1024AL
IS62C1024AL/IS65C1024AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC Average operating Current VDD Dynamic Operating Supply Current Test Conditions CE1 = VIL, CE2 = VIH VIN = VIH or VIL, I I/O= 0 mA VDD = Max., CE1 = VIL IOUT = 0 mA, f = fMAX VIN = VIH or VIL CE2 = VIH VDD = Max., VIN = VIH or VIL, CE1 VIH, or CE2 VIL, f = 0 VDD = Max., CE1 VDD - 0.2V, or CE2 0.2V, VIN VDD - 0.2V, or VIN VSS + 0.2V, f = 0 Com. Ind. Auto. Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. typ.(2) -35 ns Min. Max. -- -- -- -- -- -- -- -- -- -- 25 30 -- 30 35 -- 20 1 1.5 -- 5 10 -- 4 15 2 40 35 -45 ns Min. Max.
ISSI
Unit mA
(R)
ICC1
mA
ISB1
TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs)
mA
ISB2
A
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time OE to Low-Z Output OE to High-Z Output CE1 to Low-Z Output CE2 to Low-Z Output CE1 or CE2 to High-Z Output
(2) (2)
-35 ns Min. Max. 35 -- 3 -- -- -- 3 0 3 3 0 -- 35 -- 35 35 10 -- 10 -- -- 10
-45 ns Min. Max. 45 -- 3 -- -- -- 5 0 5 5 0 -- 45 -- 45 45 20 -- 15 -- -- 15
Unit ns ns ns ns ns ns ns ns ns ns ns
tRC tAA tOHA tACE1 tACE2 tDOE tLZOE(2) tHZOE tLZCE1
tLZCE2(2) tHZCE(2)
Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.6 to 2.4V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
IS62C1024AL IS65C1024AL
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0.6V to 2.4V 5 ns 1.5V See Figures 1a and 1b
ISSI
(R)
AC TEST LOADS
1838 5V
5V
1838
OUTPUT 100 pF Including jig and scope
Figure 1a.
OUTPUT
993
5 pF Including jig and scope
993
Figure 1b.
AC WAVEFORMS READ CYCLE NO. 1(1,2)
tRC
ADDRESS
tAA tOHA tOHA
DATA VALID
DOUT
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
5
IS62C1024AL IS65C1024AL
READ CYCLE NO. 2(1,3)
tRC
ISSI
(R)
ADDRESS
tAA tOHA
OE
tDOE tHZOE
CE1
tACE1/tACE2
tLZOE
CE2
tLZCE1/ tLZCE2
HIGH-Z
tHZCE
DATA VALID
DOUT
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power)
Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time
(4)
-35 ns Min. Max. 35 25 25 25 0 0 25 20 0 -- 3 -- -- -- -- -- -- -- -- -- 10 --
-45 ns Min. Max. 45 35 35 35 0 0 35 25 0 -- 5 -- -- -- -- -- -- -- -- -- 15 --
Unit ns ns ns ns ns ns ns ns ns ns ns
tWC tSCE1 tSCE2 tAW tHA tSA tPWE tSD tHD tHZWE tLZWE
(2) (2)
WE Pulse Width Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output
Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.6 to 2.4V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH.
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
IS62C1024AL IS65C1024AL
AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) WE
tWC
ISSI
(R)
ADDRESS
tSCE1 tHA
CE1
tSCE2
CE2
tAW tPWE(4) tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
WRITE CYCLE NO. 2 (CE1 CE2 Controlled)(1,2) CE1, CE1
tWC
ADDRESS
tSA tSCE1 tHA
CE1
tSCE2
CE2
tAW tPWE(4)
WE
tHZWE tLZWE
HIGH-Z
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
7
IS62C1024AL IS65C1024AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 2.0V, CE1 VDD - 0.2V or CE2 0.2V VIN VDD - 0.2V, or VIN VSS + 0.2V See Data Retention Waveform See Data Retention Waveform Com. Ind. Auto. Min. 2.0 -- -- -- 0 -- -- -- Typ.
ISSI
Max. 5.5 5 10 15 -- -- Unit V A
(R)
VDR
IDR
tSDR tRDR
Note:
Data Retention Setup Time Recovery Time
ns ns
tRC
1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.
DATA RETENTION WAVEFORM (CE1 Controlled) CE1
tSDR VDD 4.5V Data Retention Mode tRDR
2.2V
VDR CE1 VDD - 0.2V
CE1 GND
DATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention Mode VDD 4.5V CE2 2.2V VDR 0.4V GND CE2 0.2V tSDR tRDR
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
IS62C1024AL IS65C1024AL
ISSI
Package Plastic SOP TSOP, Type 1
(R)
ORDERING INFORMATION: IS62C1024AL Commercial Range: 0C to +70C
Speed (ns) 35 35 Order Part No. IS62C1024AL-35Q IS62C1024AL-35T
Industrial Range: -40C to +85C
Speed (ns) 35 35 35 35 Order Part No. IS62C1024AL-35QI IS62C1024AL-35QLI IS62C1024AL-35TI IS62C1024AL-35TLI Package Plastic SOP Plastic SOP, Lead-free TSOP, Type 1 TSOP, Type 1, Lead-free
ORDERING INFORMATION: IS65C1024AL Automotive Range: -40C to +125C
Speed (ns) 45 45 Order Part No. IS65C1024AL-45QA3 IS65C1024AL-45TA3 Package Plastic SOP TSOP, Type 1
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 01/24/05
9
PACKAGING INFORMATION
450-mil Plastic SOP Package Code: Q (32-pin)
ISSI
(R)
N
E1
E
1 D
SEATING PLANE
S
A
e
B
L A1
C
MILLIMETERS Symbol No. Leads A A1 B C D E E1 e L S Min. Max. 32 -- 3.00 0.10 -- 0.36 0.51 0.15 0.30 20.14 20.75 13.87 14.38 11.18 11.43 1.27 BSC 0.58 0.99 0 10 -- 0.86
INCHES Min. Max.
-- 0.118 0.004 -- 0.014 0.020 0.006 0.012 0.793 0.817 0.546 0.566 0.440 0.450 0.050 BSC 0.023 0.039 0 10 -- 0.034
Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 06/13/03
PACKAGING INFORMATION
Plastic TSOP-Type I Package Code: T (32-pin)
1
ISSI
(R)
E
H
N D
SEATING PLANE
S
A
e
B
L A1
C
MILLIMETERS Symbol No. Leads A A1 B C D E H e L S Min. Max. 32 -- 1.20 0.05 0.25 0.17 0.23 0.12 0.17 7.90 8.10 18.30 18.50 19.80 20.20 0.50 BSC 0.40 0.60 0 8 0.25 REF
INCHES Min. Max.
-- 0.047 0.002 0.010 0.007 0.009 0.005 0.007 0.311 0.319 0.720 0.728 0.780 0.795 0.020 BSC 0.016 0.024 0 8 0.010 REF
Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. C 06/13/03

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